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“On the nature of ferromagnetism in dilute magnetic semiconductors : GaAs:Mn and GaP:Mn”. Ivanov VA, Krstajic PM, Peeters FM, Fleurov V, Kikoin K, Journal of magnetism and magnetic materials
T2 –, 2nd Moscow International Symposium on Magnetism (MISM 2001), JUN 20-24, 2001, MOSCOW STATE UNIV, MOSCOW, RUSSIA 258, 237 (2003). http://doi.org/10.1016/S0304-8853(02)01023-5
Abstract: On the basis of a simplified Hamiltonian for transition metal impurities in diluted magnetic semiconductors (DMS), the nature of ferromagnetism in p-type III-V DMS are investigated. Ferromagnetism is governed by the Anderson-Hubbard parameter for 3d electrons of Mn2+ and their strong hybridization with the hole carriers in the semiconducting medium. The origin of ferromagnetism in these materials has similarity with the Zener mechanism. From the energetically preferable parallel orientation of Mn spins the Curie temperature is calculated for GaAs:Mn. (C) 2002 Published by Elsevier Science B.V.
Keywords: A1 Journal article; Condensed Matter Theory (CMT)
Impact Factor: 2.63
Times cited: 10
DOI: 10.1016/S0304-8853(02)01023-5
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