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“State of the art and prospects for Halide Perovskite Nanocrystals”. Dey A, Ye J, De A, Debroye E, Ha SK, Bladt E, Kshirsagar AS, Wang Z, Yin J, Wang Y, Quan LN, Yan F, Gao M, Li X, Shamsi J, Debnath T, Cao M, Scheel MA, Kumar S, Steele JA, Gerhard M, Chouhan L, Xu K, Wu X-gang, Li Y, Zhang Y, Dutta A, Han C, Vincon I, Rogach AL, Nag A, Samanta A, Korgel BA, Shih C-J, Gamelin DR, Son DH, Zeng H, Zhong H, Sun H, Demir HV, Scheblykin IG, Mora-Sero I, Stolarczyk JK, Zhang JZ, Feldmann J, Hofkens J, Luther JM, Perez-Prieto J, Li L, Manna L, Bodnarchuk M I, Kovalenko M V, Roeffaers MBJ, Pradhan N, Mohammed OF, Bakr OM, Yang P, Muller-Buschbaum P, Kamat P V, Bao Q, Zhang Q, Krahne R, Galian RE, Stranks SD, Bals S, Biju V, Tisdale WA, Yan Y, Hoye RLZ, Polavarapu L, Acs Nano 15, 10775 (2021). http://doi.org/10.1021/ACSNANO.0C08903
Abstract: Metal-halide perovskites have rapidly emerged as one of the most promising materials of the 21st century, with many exciting properties and great potential for a broad range of applications, from photovoltaics to optoelectronics and photocatalysis. The ease with which metal-halide perovskites can be synthesized in the form of brightly luminescent colloidal nanocrystals, as well as their tunable and intriguing optical and electronic properties, has attracted researchers from different disciplines of science and technology. In the last few years, there has been a significant progress in the shape-controlled synthesis of perovskite nanocrystals and understanding of their properties and applications. In this comprehensive review, researchers having expertise in different fields (chemistry, physics, and device engineering) of metal-halide perovskite nanocrystals have joined together to provide a state of the art overview and future prospects of metal-halide perovskite nanocrystal research.
Keywords: A1 Journal article; Engineering sciences. Technology; Electron microscopy for materials research (EMAT)
Impact Factor: 13.942
Times cited: 538
DOI: 10.1021/ACSNANO.0C08903
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“Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers”. Marinov D, de Marneffe J-F, Smets Q, Arutchelvan G, Bal KM, Voronina E, Rakhimova T, Mankelevich Y, El Kazzi S, Nalin Mehta A, Wyndaele P-J, Heyne MH, Zhang J, With PC, Banerjee S, Neyts EC, Asselberghs I, Lin D, De Gendt S, npj 2D Materials and Applications 5, 17 (2021). http://doi.org/10.1038/s41699-020-00197-7
Abstract: The cleaning of two-dimensional (2D) materials is an essential step in the fabrication of future devices, leveraging their unique physical, optical, and chemical properties. Part of these emerging 2D materials are transition metal dichalcogenides (TMDs). So far there is limited understanding of the cleaning of “monolayer” TMD materials. In this study, we report on the use of downstream H<sub>2</sub>plasma to clean the surface of monolayer WS<sub>2</sub>grown by MOCVD. We demonstrate that high-temperature processing is essential, allowing to maximize the removal rate of polymers and to mitigate damage caused to the WS<sub>2</sub>in the form of sulfur vacancies. We show that low temperature in situ carbonyl sulfide (OCS) soak is an efficient way to resulfurize the material, besides high-temperature H<sub>2</sub>S annealing. The cleaning processes and mechanisms elucidated in this work are tested on back-gated field-effect transistors, confirming that transport properties of WS<sub>2</sub>devices can be maintained by the combination of H<sub>2</sub>plasma cleaning and OCS restoration. The low-damage plasma cleaning based on H<sub>2</sub>and OCS is very reproducible, fast (completed in a few minutes) and uses a 300 mm industrial plasma etch system qualified for standard semiconductor pilot production. This process is, therefore, expected to enable the industrial scale-up of 2D-based devices, co-integrated with silicon technology.
Keywords: A1 Journal article; Engineering sciences. Technology; Plasma Lab for Applications in Sustainability and Medicine – Antwerp (PLASMANT)
DOI: 10.1038/s41699-020-00197-7
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