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“Microstructure of YBa2Cu3O7-x films on buffered Si for microelectronic applications”. Vasiliev AL, Van Tendeloo G, Boikov Y, Olsson E, Ivanov S, Superconductor science and technology 10, 356 (1997)
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 2.878
Times cited: 2
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“Structural aspect of YBa2Cu3O7-x films on Sis with complex barrier layers”. Vasiliev AL, Van Tendeloo G, Amelinckx S, Boikov Y, Olsson E, Ivanov Z, Physica: C : superconductivity 244, 373 (1995). http://doi.org/10.1016/0921-4534(95)00080-1
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
Impact Factor: 0.942
Times cited: 28
DOI: 10.1016/0921-4534(95)00080-1
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“Structural aspects of the combination of Si and YBa2Cu3O7-x”. Vasiliev AL, Van Tendeloo G, Boikov Y, Olsson E, Ivanov Z, Claeson T, Kiselev NA, Institute of physics conference series 146, 333 (1995)
Abstract: The microstructure of defects and interfaces as well as interfacial reactions of the YBa2Cu3O7-x (YBCO) thin films on Si or Si on sapphire with single Y-stabilized ZrO2 (YSZ), double CeO2/YSZ or triple MgO/CeO2/YSZ buffer layer has been characterized by transmission electron microscopy The complex buffer made it possible to prevent detrimental interdiffusion and to control the orientation of YBCO layers.
Keywords: A1 Journal article; Electron microscopy for materials research (EMAT)
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